FDD1600N10ALZD
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 100V 6.8A TO252-4L
$0.33
Available to order
Reference Price (USD)
2,500+
$0.38808
Exquisite packaging
Discount
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The FDD1600N10ALZD from Fairchild Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDD1600N10ALZD offers the precision and reliability you need. Trust Fairchild Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 14.9W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-4
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
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