FDMC2610
onsemi
onsemi
MOSFET N-CH 200V 2.2A/9.5A 8MLP
$2.58
Available to order
Reference Price (USD)
3,000+
$0.76478
6,000+
$0.73645
Exquisite packaging
Discount
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Discover the FDMC2610 from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FDMC2610 ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MLP (3.3x3.3)
- Package / Case: 8-PowerWDFN
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