FDN358P
onsemi
onsemi
MOSFET P-CH 30V 1.5A SUPERSOT3
$0.45
Available to order
Reference Price (USD)
3,000+
$0.13467
6,000+
$0.12651
15,000+
$0.11835
30,000+
$0.10855
75,000+
$0.10447
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the FDN358P by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FDN358P is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Microchip Technology
TP2104N3-G
Infineon Technologies
IPI024N06N3GXKSA1
STMicroelectronics
STW60NM50N
IXYS
IXFT24N90P
onsemi
NTD80N02-1G
Vishay Siliconix
SI7892BDP-T1-GE3
STMicroelectronics
STD5N62K3
Vishay Siliconix
SI2308BDS-T1-E3
Diodes Incorporated
DMN30H4D1S-7
Microchip Technology