FDP3682
onsemi
onsemi
MOSFET N-CH 100V 6A/32A TO220-3
$2.09
Available to order
Reference Price (USD)
1+
$1.83000
10+
$1.65900
100+
$1.34230
800+
$0.95660
1,600+
$0.88176
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FDP3682 single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FDP3682 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SI4114DY-T1-GE3
Infineon Technologies
IPB65R065C7ATMA2
Vishay Siliconix
IRL640PBF
Alpha & Omega Semiconductor Inc.
AOY423
Taiwan Semiconductor Corporation
TSM80N1R2CH C5G
Infineon Technologies
IPP120P04P4L03AKSA1
Infineon Technologies
IRL40B212
Vishay Siliconix
SUP85N15-21-E3
IXYS
IXFH94N30P3
onsemi