FF150R12MS4GBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 225A 1250W
$186.08
Available to order
Reference Price (USD)
10+
$112.97300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FF150R12MS4GBOSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FF150R12MS4GBOSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FF150R12MS4GBOSA1 power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 225 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
DF900R12IP4DBOSA1
Infineon Technologies
FP75R12KT4B15BOSA1
Infineon Technologies
FS200R12W3T7B11BPSA1
Infineon Technologies
FF300R17KE4HOSA1
Infineon Technologies
FF450R17ME3BOSA1
Infineon Technologies
FZ600R12KS4HOSA1
Infineon Technologies
FZ2400R17HP4B29BOSA2
Infineon Technologies
FZ1800R45HL4BPSA1
Infineon Technologies
FF200R12KT3HOSA1
Infineon Technologies