FF200R12KT3HOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 1050W
$167.08
Available to order
Reference Price (USD)
10+
$105.76200
Exquisite packaging
Discount
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Optimize your power systems with Infineon Technologies's FF200R12KT3HOSA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FF200R12KT3HOSA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every FF200R12KT3HOSA1 module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Power - Max: 1050 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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