FF225R65T3E3P3BPMA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-XHP3K6
$2,269.44
Available to order
Reference Price (USD)
1+
$2269.44000
500+
$2246.7456
1000+
$2224.0512
1500+
$2201.3568
2000+
$2178.6624
2500+
$2155.968
Exquisite packaging
Discount
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Infineon Technologies's FF225R65T3E3P3BPMA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FF225R65T3E3P3BPMA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FF225R65T3E3P3BPMA1 power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 5900 V
- Current - Collector (Ic) (Max): 225 A
- Power - Max: 1000 kW
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-XHP3K65
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