FF650R17IE4DB2BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 4150W
$872.23
Available to order
Reference Price (USD)
3+
$591.63333
Exquisite packaging
Discount
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The FF650R17IE4DB2BOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FF650R17IE4DB2BOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FF650R17IE4DB2BOSA1 module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 4150 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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