FF800R17KE3NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 4450W
$850.35
Available to order
Reference Price (USD)
2+
$839.20000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FF800R17KE3NOSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FF800R17KE3NOSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FF800R17KE3NOSA1 power module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 4450 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
DF600R12N2E4PB11BPSA1
IXYS
MIXA30W1200TED
Microchip Technology
APTGT150DH120G
Infineon Technologies
P3000Z45X168HPSA1
Infineon Technologies
FP75R07N2E4B11BPSA1
IXYS
MUBW25-12A7
onsemi
NXH25T120L2Q1PTG
Infineon Technologies
DF450R17N2E4PB11BDLA1
IXYS
MIXG240W1200PZTEH
Infineon Technologies