FGA25N120ANTDTU
onsemi
onsemi
IGBT NPT/TRENCH 1200V 50A TO3P
$2.54
Available to order
Reference Price (USD)
1+
$4.36000
10+
$3.92900
450+
$3.08411
900+
$2.78140
1,350+
$2.36714
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FGA25N120ANTDTU from onsemi is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose FGA25N120ANTDTU for superior performance in your next power electronics project.
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
- Power - Max: 312 W
- Switching Energy: 4.1mJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 200 nC
- Td (on/off) @ 25°C: 50ns/190ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 350 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
IXYS
IXYT20N120C3D1HV
Rohm Semiconductor
RGW00TS65CHRC11
STMicroelectronics
STGP19NC60W
Infineon Technologies
IKB20N65EH5ATMA1
Microchip Technology
APT50GF120B2RG
Rohm Semiconductor
RGS80TS65HRC11
STMicroelectronics
STGB6NC60HT4
Alpha & Omega Semiconductor Inc.
AOK50B65M2
IXYS
IXBH42N170A
IXYS