IXBH42N170A
IXYS
IXYS
IGBT 1700V 42A 357W TO247
$28.73
Available to order
Reference Price (USD)
30+
$18.83167
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXBH42N170A Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXBH42N170A ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXBH42N170A into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 42 A
- Current - Collector Pulsed (Icm): 265 A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A
- Power - Max: 357 W
- Switching Energy: 3.43mJ (on), 430µJ (off)
- Input Type: Standard
- Gate Charge: 188 nC
- Td (on/off) @ 25°C: 19ns/200ns
- Test Condition: 850V, 21A, 1Ohm, 15V
- Reverse Recovery Time (trr): 330 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
Related Products
IXYS
IXGA48N60A3
IXYS
IXYX100N120C3
Infineon Technologies
IHW40T60FKSA1
STMicroelectronics
STGFW20V60DF
onsemi
AFGHL75T65SQDT
Rohm Semiconductor
RGWS00TS65GC13
Rohm Semiconductor
RGT50NS65DGTL
STMicroelectronics
STGF10M65DF2
onsemi
FGH50N3
IXYS