STGF10M65DF2
STMicroelectronics
STMicroelectronics
IGBT TRENCH 650V 20A TO220FP
$1.66
Available to order
Reference Price (USD)
1+
$2.26000
50+
$1.93960
100+
$1.67180
500+
$1.39696
1,000+
$1.17991
2,500+
$1.10757
5,000+
$1.09551
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGF10M65DF2 by STMicroelectronics is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the STGF10M65DF2 delivers robust performance. STMicroelectronics's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate STGF10M65DF2 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: 30 W
- Switching Energy: 120µJ (on), 270µJ (off)
- Input Type: Standard
- Gate Charge: 28 nC
- Td (on/off) @ 25°C: 19ns/91ns
- Test Condition: 400V, 10A, 22Ohm, 15V
- Reverse Recovery Time (trr): 96 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
Related Products
onsemi
FGH50N3
IXYS
IXYX100N65B3D1
onsemi
TIG058E8-TL-H
Rohm Semiconductor
RGTH50TS65DGC11
Infineon Technologies
IKW03N120H2FKSA1
Renesas Electronics America Inc
RJP30H1DPP-M1#T2
IXYS
IXGT16N170A
Infineon Technologies
AIGB15N65H5ATMA1
Alpha & Omega Semiconductor Inc.
AOK10B60D
Microchip Technology