IXYX100N65B3D1
IXYS
IXYS
IGBT 650V 188A 1150W PLUS247
$18.04
Available to order
Reference Price (USD)
30+
$14.60767
Exquisite packaging
Discount
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The IXYX100N65B3D1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXYX100N65B3D1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXYX100N65B3D1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 225 A
- Current - Collector Pulsed (Icm): 460 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
- Power - Max: 830 W
- Switching Energy: 1.27mJ (on), 1.37mJ (off)
- Input Type: Standard
- Gate Charge: 168 nC
- Td (on/off) @ 25°C: 29ns/150ns
- Test Condition: 400V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr): 156 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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