IXYX100N120C3
IXYS
IXYS
IGBT 1200V 188A 1150W PLUS247
$24.43
Available to order
Reference Price (USD)
1+
$20.72000
10+
$18.83700
30+
$17.42433
120+
$16.01142
270+
$14.59867
510+
$13.65682
Exquisite packaging
Discount
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Discover the IXYX100N120C3 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXYX100N120C3 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXYX100N120C3 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 188 A
- Current - Collector Pulsed (Icm): 490 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
- Power - Max: 1150 W
- Switching Energy: 6.5mJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 270 nC
- Td (on/off) @ 25°C: 32ns/123ns
- Test Condition: 600V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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