IXYT20N120C3D1HV
IXYS
IXYS
IGBT
$9.78
Available to order
Reference Price (USD)
30+
$9.62167
Exquisite packaging
Discount
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Discover the IXYT20N120C3D1HV Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXYT20N120C3D1HV ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXYT20N120C3D1HV for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 36 A
- Current - Collector Pulsed (Icm): 88 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 230 W
- Switching Energy: 1.3mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 53 nC
- Td (on/off) @ 25°C: 20ns/90ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 29 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV (IXYT)
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