FGP10N60UNDF
onsemi
onsemi
IGBT NPT 600V 20A TO220-3
$1.92
Available to order
Reference Price (USD)
1+
$2.07000
10+
$1.86800
100+
$1.51220
800+
$1.25288
1,600+
$1.04813
Exquisite packaging
Discount
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Discover the FGP10N60UNDF Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the FGP10N60UNDF ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the FGP10N60UNDF for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
- Power - Max: 139 W
- Switching Energy: 150µJ (on), 50µJ (off)
- Input Type: Standard
- Gate Charge: 37 nC
- Td (on/off) @ 25°C: 8ns/52.2ns
- Test Condition: 400V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 37.7 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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