SKW07N120
Infineon Technologies
Infineon Technologies
IGBT, 16.5A, 1200V, N-CHANNEL
$3.54
Available to order
Reference Price (USD)
1+
$3.54000
500+
$3.5046
1000+
$3.4692
1500+
$3.4338
2000+
$3.3984
2500+
$3.363
Exquisite packaging
Discount
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The SKW07N120 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The SKW07N120 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate SKW07N120 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16.5 A
- Current - Collector Pulsed (Icm): 27 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
- Power - Max: 125 W
- Switching Energy: 1mJ
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 27ns/440ns
- Test Condition: 800V, 8A, 47Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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