BIDW50N65T
Bourns Inc.
Bourns Inc.
IGBT 650V 50A TRENCH TO-247-3L
$5.62
Available to order
Reference Price (USD)
1+
$5.62000
500+
$5.5638
1000+
$5.5076
1500+
$5.4514
2000+
$5.3952
2500+
$5.339
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the BIDW50N65T Single IGBT transistor from Bourns Inc.. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the BIDW50N65T ensures energy efficiency and reliability. Trust Bourns Inc.'s expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 416 W
- Switching Energy: 3mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 123 nC
- Td (on/off) @ 25°C: 37ns/125ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 37.5 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
STMicroelectronics
STGB5H60DF
Infineon Technologies
IKW40N120H3FKSA1
STMicroelectronics
STGB18N40LZT4
Infineon Technologies
SKW30N60FKSA1
onsemi
NGTB45N60SWG
IXYS
IXYX110N120A4
Rohm Semiconductor
RGW80TS65DGC11
Infineon Technologies
IKP08N65F5XKSA1
onsemi
NGTB30N60FWG
Infineon Technologies