NGTB30N60FWG
onsemi
onsemi
IGBT 600V 60A 167W TO247
$2.46
Available to order
Reference Price (USD)
1+
$2.46000
500+
$2.4354
1000+
$2.4108
1500+
$2.3862
2000+
$2.3616
2500+
$2.337
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGTB30N60FWG Single IGBT transistor by onsemi is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the NGTB30N60FWG provides consistent performance in varied conditions. Rely on onsemi's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 167 W
- Switching Energy: 650µJ (on), 650µJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 81ns/190ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Infineon Technologies
AUIRGP4062D
IXYS
IXYK120N120C3
Rohm Semiconductor
RGT80TS65DGC13
onsemi
NGTB25N120FL2WG
Alpha & Omega Semiconductor Inc.
AOB5B65M1
onsemi
NGTG40N120FL2WG
Rohm Semiconductor
RGTH50TS65DGC13
STMicroelectronics
STGYA50H120DF2
Microchip Technology
APT80GA90B
Microchip Technology