NGTB25N120FL2WG
onsemi
onsemi
IGBT FIELD STOP 1200V 50A TO247
$5.06
Available to order
Reference Price (USD)
1+
$5.48000
30+
$4.68433
120+
$4.08267
510+
$3.50104
1,020+
$2.97960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGTB25N120FL2WG Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The NGTB25N120FL2WG ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate NGTB25N120FL2WG into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 385 W
- Switching Energy: 1.95mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 178 nC
- Td (on/off) @ 25°C: 87ns/179ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 154 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Alpha & Omega Semiconductor Inc.
AOB5B65M1
onsemi
NGTG40N120FL2WG
Rohm Semiconductor
RGTH50TS65DGC13
STMicroelectronics
STGYA50H120DF2
Microchip Technology
APT80GA90B
Microchip Technology
APT80GA60B
Infineon Technologies
IKFW40N60DH3EXKSA1
Microchip Technology
APT80GP60B2G
Infineon Technologies
IKW08T120FKSA1
IXYS