STGYA50H120DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V,
$9.99
Available to order
Reference Price (USD)
1+
$9.99000
500+
$9.8901
1000+
$9.7902
1500+
$9.6903
2000+
$9.5904
2500+
$9.4905
Exquisite packaging
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The STGYA50H120DF2 by STMicroelectronics is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With STMicroelectronics's reputation for quality, the STGYA50H120DF2 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 2mJ (on), 2.1mJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 40ns/284ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 340 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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