IXYK200N65B3
IXYS
IXYS
IGBT
$27.58
Available to order
Reference Price (USD)
25+
$13.26720
Exquisite packaging
Discount
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Optimize your power systems with the IXYK200N65B3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYK200N65B3 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 410 A
- Current - Collector Pulsed (Icm): 1100 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
- Power - Max: 1560 W
- Switching Energy: 5mJ (on), 4mJ (off)
- Input Type: Standard
- Gate Charge: 340 nC
- Td (on/off) @ 25°C: 60ns/370ns
- Test Condition: 400V, 100A, 0Ohm, 15V
- Reverse Recovery Time (trr): 108 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
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