IKW08T120FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 16A TO247-3
$3.93
Available to order
Reference Price (USD)
1+
$4.30000
10+
$3.85800
240+
$3.16133
720+
$2.69119
1,200+
$2.26968
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IKW08T120FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKW08T120FKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKW08T120FKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
- Power - Max: 70 W
- Switching Energy: 1.37mJ
- Input Type: Standard
- Gate Charge: 53 nC
- Td (on/off) @ 25°C: 40ns/450ns
- Test Condition: 600V, 8A, 81Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
Related Products
IXYS
IXBH12N300
Fairchild Semiconductor
HGTP12N60A4D
STMicroelectronics
STGP8NC60KD
IXYS
IXYK200N65B3
Infineon Technologies
IRGP4263PBF
IXYS
IXGH30N120C3H1
Fairchild Semiconductor
FGA40T65UQDF
Infineon Technologies
IKFW50N60DH3XKSA1
STMicroelectronics
STGW20H60DF
NTE Electronics, Inc