RGT80TS65DGC13
Rohm Semiconductor
Rohm Semiconductor
5US SHORT-CIRCUIT TOLERANCE, 650
$11.35
Available to order
Reference Price (USD)
1+
$11.35000
500+
$11.2365
1000+
$11.123
1500+
$11.0095
2000+
$10.896
2500+
$10.7825
Exquisite packaging
Discount
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Upgrade your power management systems with the RGT80TS65DGC13 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGT80TS65DGC13 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGT80TS65DGC13 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 234 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 34ns/119ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 236 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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