IXYX110N120A4
IXYS
IXYS
IGBT 1200V 110A GNX4 XPT PLUS247
$37.22
Available to order
Reference Price (USD)
1+
$37.22000
500+
$36.8478
1000+
$36.4756
1500+
$36.1034
2000+
$35.7312
2500+
$35.359
Exquisite packaging
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Optimize your power systems with the IXYX110N120A4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYX110N120A4 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 375 A
- Current - Collector Pulsed (Icm): 900 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
- Power - Max: 1360 W
- Switching Energy: 2.5mJ (on), 8.4mJ (off)
- Input Type: Standard
- Gate Charge: 305 nC
- Td (on/off) @ 25°C: 42ns/550ns
- Test Condition: 600V, 50A, 1.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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