IKW40N120H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 80A 483W TO247-3
$8.92
Available to order
Reference Price (USD)
1+
$9.60000
10+
$8.73300
240+
$7.34675
720+
$6.48503
1,200+
$5.73573
Exquisite packaging
Discount
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Upgrade your power management systems with the IKW40N120H3FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKW40N120H3FKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKW40N120H3FKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 483 W
- Switching Energy: 4.4mJ
- Input Type: Standard
- Gate Charge: 185 nC
- Td (on/off) @ 25°C: 30ns/290ns
- Test Condition: 600V, 40A, 12Ohm, 15V
- Reverse Recovery Time (trr): 355 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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