IKP28N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 28A TO220-3
$3.64
Available to order
Reference Price (USD)
1+
$3.64000
500+
$3.6036
1000+
$3.5672
1500+
$3.5308
2000+
$3.4944
2500+
$3.458
Exquisite packaging
Discount
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The IKP28N65ES5XKSA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the IKP28N65ES5XKSA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 28A
- Power - Max: 130 W
- Switching Energy: 530µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 50 nC
- Td (on/off) @ 25°C: 27ns/184ns
- Test Condition: 400V, 28A, 34Ohm, 15V
- Reverse Recovery Time (trr): 73 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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