FGY60T120SQDN
onsemi
onsemi
IGBT 1200V 60A UFS
$9.84
Available to order
Reference Price (USD)
1+
$8.78000
10+
$7.95800
450+
$6.35627
900+
$5.82232
1,350+
$5.11043
Exquisite packaging
Discount
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The FGY60T120SQDN Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGY60T120SQDN ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGY60T120SQDN into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
- Power - Max: 517 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 311 nC
- Td (on/off) @ 25°C: 52ns/296ns
- Test Condition: 600V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: TO-247-3
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