FMG1G300US60LE
Fairchild Semiconductor
Fairchild Semiconductor
IGBT, 300A, 600V, N-CHANNEL
$68.07
Available to order
Reference Price (USD)
1+
$68.07000
500+
$67.3893
1000+
$66.7086
1500+
$66.0279
2000+
$65.3472
2500+
$64.6665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Fairchild Semiconductor's FMG1G300US60LE IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FMG1G300US60LE offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FMG1G300US60LE in your next-generation HVDC systems or particle accelerator power supplies. Fairchild Semiconductor delivers reliability where it matters most with the FMG1G300US60LE IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 892 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Related Products
Microchip Technology
APT85GR120J
Infineon Technologies
FF400R12KE3HOSA1
Infineon Technologies
FF600R12ME4PBOSA1
Infineon Technologies
F3L400R07ME4B23BOSA1
onsemi
NXH35C120L2C2SG
Infineon Technologies
FP20R06W1E3B11BOMA1
Fairchild Semiconductor
FMG2G400US60
Infineon Technologies
FF450R17IE4BOSA2
Infineon Technologies
FP40R12KE3GBOSA1
Infineon Technologies