FP35R12N2T7BPSA2
Infineon Technologies
Infineon Technologies
LOW POWER ECONO
$116.90
Available to order
Reference Price (USD)
1+
$116.90000
500+
$115.731
1000+
$114.562
1500+
$113.393
2000+
$112.224
2500+
$111.055
Exquisite packaging
Discount
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Infineon Technologies's FP35R12N2T7BPSA2 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the FP35R12N2T7BPSA2 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
- Current - Collector Cutoff (Max): 7 µA
- Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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