FPF2G120BF07AS
onsemi
onsemi
IGBT MODULE 650V 40A 156W F2
$105.40
Available to order
Reference Price (USD)
1+
$105.40000
Exquisite packaging
Discount
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Engineered for excellence, the FPF2G120BF07AS IGBT module by onsemi sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FPF2G120BF07AS finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. onsemi continues to lead the IGBT module revolution with innovations like the FPF2G120BF07AS.
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Configuration: 3 Independent
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 156 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: F2
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