FZ600R17KE3S4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 1200A 3150W
$281.74
Available to order
Reference Price (USD)
10+
$161.74800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FZ600R17KE3S4HOSA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FZ600R17KE3S4HOSA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1200 A
- Power - Max: 3150 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FS200R07A5E3S6BPSA1
Infineon Technologies
FF600R17ME4PBOSA1
Infineon Technologies
FS3L100R07W3S5B11BPSA1
Infineon Technologies
IFF300B12N2E4PB11BPSA1
Infineon Technologies
FS450R17OE4PBOSA1
Infineon Technologies
FP15R12W1T7PB11BPSA1
Infineon Technologies
FF1200R17IP5BPSA1
Microchip Technology
APTGT75A120T1G
Infineon Technologies
FZ800R33KF2CS1NDSA1
Microchip Technology