FP15R12W1T7PB11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY1B-2
$46.32
Available to order
Reference Price (USD)
1+
$46.32000
500+
$45.8568
1000+
$45.3936
1500+
$44.9304
2000+
$44.4672
2500+
$44.004
Exquisite packaging
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Experience next-generation power control with Infineon Technologies's FP15R12W1T7PB11BPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FP15R12W1T7PB11BPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FP15R12W1T7PB11BPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FP15R12W1T7PB11BPSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 15 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 3 µA
- Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
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