G06NP06S2
Goford Semiconductor
Goford Semiconductor
N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance G06NP06S2 from Goford Semiconductor, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the G06NP06S2 delivers unmatched performance. Trust Goford Semiconductor's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W (Tc), 2.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
Related Products
Fairchild Semiconductor
IRF640ACP001
Renesas Electronics America Inc
2SJ550STL-E
IXYS
FMM22-06PF
Microchip Technology
MSCSM120AM31CTBL1NG
Vishay Siliconix
SQJ912DEP-T1_GE3
IXYS
MTI200WX75GD-SMD
Diodes Incorporated
DMNH6065SPDWQ-13
Microchip Technology
MSCSM120TLM50C3AG
Diodes Incorporated
DMC2990UDJQ-7B
Renesas