SQJ912DEP-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE DUAL N-CHANNEL 40 V (
$1.10
Available to order
Reference Price (USD)
1+
$1.10000
500+
$1.089
1000+
$1.078
1500+
$1.067
2000+
$1.056
2500+
$1.045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the SQJ912DEP-T1_GE3 from Vishay Siliconix, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the SQJ912DEP-T1_GE3 ensures top-notch performance. Vishay Siliconix's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 27W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
IXYS
MTI200WX75GD-SMD
Diodes Incorporated
DMNH6065SPDWQ-13
Microchip Technology
MSCSM120TLM50C3AG
Diodes Incorporated
DMC2990UDJQ-7B
Renesas
UPA2793GR(0)-E1-AZ
Microchip Technology
APTM50HM75SCTG
Comchip Technology
CMSBN6601-HF
Microchip Technology
MSCSM170AM029CT6LIAG
Panjit International Inc.
PJT7601_R1_00001
Renesas Electronics America Inc