G2R1000MT17D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 4A TO247-3
$5.77
Available to order
Reference Price (USD)
1+
$5.77000
500+
$5.7123
1000+
$5.6546
1500+
$5.5969
2000+
$5.5392
2500+
$5.4815
Exquisite packaging
Discount
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Optimize your power electronics with the G2R1000MT17D single MOSFET from GeneSiC Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the G2R1000MT17D combines cutting-edge technology with GeneSiC Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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