H5N2901FN-E
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$2.44
Available to order
Reference Price (USD)
1+
$2.44000
500+
$2.4156
1000+
$2.3912
1500+
$2.3668
2000+
$2.3424
2500+
$2.318
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the H5N2901FN-E single MOSFET from Renesas Electronics America Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the H5N2901FN-E combines cutting-edge technology with Renesas Electronics America Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Vishay Siliconix
SIR696DP-T1-GE3
STMicroelectronics
STB12NK80ZT4
Diodes Incorporated
DMG3420U-7
Vishay Siliconix
SI4116DY-T1-GE3
Panjit International Inc.
PJQ5423_R2_00001
Fairchild Semiconductor
SFI9510TU
Nexperia USA Inc.
PMV30XPEAR
Taiwan Semiconductor Corporation
TSM043NH04CR RLG
Diodes Incorporated
DMP3013SFV-13
Infineon Technologies