HFA3096BZ
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANS 12/15V 5.5GHZ 16SOIC
$12.39
Available to order
Reference Price (USD)
1+
$8.55000
10+
$7.72100
25+
$7.36160
100+
$6.39200
250+
$6.10472
500+
$5.56606
1,000+
$4.84785
Exquisite packaging
Discount
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Upgrade your RF circuits with the HFA3096BZ, a high-efficiency Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The HFA3096BZ offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Renesas Electronics America Inc for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: 3 NPN + 2 PNP
- Voltage - Collector Emitter Breakdown (Max): 12V, 15V
- Frequency - Transition: 8GHz, 5.5GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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