HFA3127MJ/883
Harris Corporation
Harris Corporation
DUAL MARKED (5962-9474901MEA)
$24.66
Available to order
Reference Price (USD)
1+
$24.66000
500+
$24.4134
1000+
$24.1668
1500+
$23.9202
2000+
$23.6736
2500+
$23.427
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your RF designs with the HFA3127MJ/883, a high-efficiency Bipolar Junction Transistor (BJT) from Harris Corporation. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The HFA3127MJ/883 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Harris Corporation for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CERDIP
Related Products
Infineon Technologies
BFP182WH6327XTSA1
MACOM Technology Solutions
MRF428
Infineon Technologies
BFS17PE6327HTSA1
Infineon Technologies
BFP420H6740XTSA1
Diodes Incorporated
ZUMTS17NTA
Renesas
NE85639-T1-A
onsemi
FH105A-TR-E
Fairchild Semiconductor
BF494
Renesas Electronics America Inc
NESG340034-T1-A
onsemi