NE85639-T1-A
Renesas
Renesas
SAME AS 2SC4093 NPN SILICON AMPL
$1.60
Available to order
Reference Price (USD)
1+
$1.60000
500+
$1.584
1000+
$1.568
1500+
$1.552
2000+
$1.536
2500+
$1.52
Exquisite packaging
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Discover the NE85639-T1-A, a cutting-edge RF Bipolar Junction Transistor (BJT) from Renesas, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NE85639-T1-A features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Renesas for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 13dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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