HFA3127R
Intersil
Intersil
RF SMALL SIGNAL TRANSISTOR
$2.74
Available to order
Reference Price (USD)
1+
$2.74000
500+
$2.7126
1000+
$2.6852
1500+
$2.6578
2000+
$2.6304
2500+
$2.603
Exquisite packaging
Discount
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Introducing the HFA3127R, a high-performance RF Bipolar Junction Transistor (BJT) from Intersil, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The HFA3127R features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Intersil for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VFQFN Exposed Pad
- Supplier Device Package: 16-QFN (3x3)
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