HGT1S12N60B3D
Harris Corporation
Harris Corporation
27A, 600V, N-CHANNEL IGBT
$1.26
Available to order
Reference Price (USD)
1+
$1.26000
500+
$1.2474
1000+
$1.2348
1500+
$1.2222
2000+
$1.2096
2500+
$1.197
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the HGT1S12N60B3D Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the HGT1S12N60B3D provides reliable and efficient operation. Harris Corporation's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose HGT1S12N60B3D for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 27 A
- Current - Collector Pulsed (Icm): 110 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 304µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 26ns/150ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
Related Products
Infineon Technologies
IGW50N60TPXKSA1
IXYS
IXGP20N120A3
onsemi
NGTB40N60IHLWG
STMicroelectronics
STGYA120M65DF2AG
IXYS
IXGK120N120B3
STMicroelectronics
STGWA25H120F2
IXYS
IXBX25N250
Infineon Technologies
IRG6B330UDPBF
onsemi
NGTB15N120FL2WG
Infineon Technologies