HN1B01FU-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A US6-PLN
$0.33
Available to order
Reference Price (USD)
3,000+
$0.06038
Exquisite packaging
Discount
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The HN1B01FU-GR,LF from Toshiba Semiconductor and Storage sets new benchmarks for Bipolar Transistor Arrays in consumer electronics. Its dual/triple transistor configuration enables sophisticated circuit designs for smart home devices, wearables, and battery management systems. This Discrete Semiconductor Product features gold-bonded leads for superior connectivity in high-vibration applications like automotive ECUs. Engineers value its drop-in replacement compatibility with legacy systems, reducing redesign efforts during component upgrades.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 200mW, 210mW
- Frequency - Transition: 150MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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