HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 30V 0.5A SM6
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The HN1B04F(TE85L,F) by Toshiba Semiconductor and Storage redefines efficiency in Bipolar Transistor Arrays with its ultra-low noise characteristics. Perfect for RF modules, oscillators, and ADC/DAC circuits, this Discrete Semiconductor Product minimizes signal distortion in high-frequency applications. Automotive infotainment systems and IoT devices benefit from its fast response time and energy-saving operation. Backed by Toshiba Semiconductor and Storage s quality assurance, the HN1B04F(TE85L,F) guarantees 100% testing for parameter consistency across all arrayed transistors.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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