HN1B04FE-Y,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP + NPN TR VCEO:-50
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
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Upgrade your designs with the HN1B04FE-Y,LXHF BJT Array Toshiba Semiconductor and Storage s flagship solution for Darlington pair configurations. This Discrete Semiconductor Product boasts high current gain (hFE) perfect for solenoid drivers, stepper motor controllers, and industrial PLCs. The HN1B04FE-Y,LXHF is extensively used in robotics and power supply units due to its exceptional thermal management. Its lead-free compliance and RoHS certification make it an environmentally responsible choice for global markets.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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