HN2A01FE-Y(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 50V 0.15A ES6
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The HN2A01FE-Y(TE85L,F from Toshiba Semiconductor and Storage sets new benchmarks for Bipolar Transistor Arrays in consumer electronics. Its dual/triple transistor configuration enables sophisticated circuit designs for smart home devices, wearables, and battery management systems. This Discrete Semiconductor Product features gold-bonded leads for superior connectivity in high-vibration applications like automotive ECUs. Engineers value its drop-in replacement compatibility with legacy systems, reducing redesign efforts during component upgrades.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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