HN4B01JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A ESV PLN
$0.39
Available to order
Reference Price (USD)
4,000+
$0.07140
8,000+
$0.06426
12,000+
$0.05712
28,000+
$0.05355
100,000+
$0.04760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HN4B01JE(TE85L,F) from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision amplification and switching applications. This Discrete Semiconductor Product integrates multiple transistors in a single package, offering enhanced thermal stability and space-saving benefits. Ideal for analog circuits, motor control, and signal processing, the HN4B01JE(TE85L,F) ensures reliable performance in industrial automation, automotive electronics, and consumer devices. Its compact design and low power consumption make it a preferred choice for engineers seeking efficiency and durability.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
Related Products
Nexperia USA Inc.
BC847QASZ
Nexperia USA Inc.
BCM857BS,115
Diodes Incorporated
BCM857BS-7-F
Micro Commercial Co
BC857S-TP
Nexperia USA Inc.
PMBT3946YPN,125
onsemi
SBC846BDW1T1G
Linear Integrated Systems, Inc.
IT124 TO-78 6L
Sanken
SMA5106
Central Semiconductor Corp
CMLT3906EG TR PBFREE
Infineon Technologies