IGZ75N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 119A TO247-4
$3.42
Available to order
Reference Price (USD)
240+
$5.23175
Exquisite packaging
Discount
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The IGZ75N65H5XKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IGZ75N65H5XKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IGZ75N65H5XKSA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 119 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 680µJ (on), 430µJ (off)
- Input Type: Standard
- Gate Charge: 166 nC
- Td (on/off) @ 25°C: 26ns/347ns
- Test Condition: 400V, 37.5A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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