FGH50T65UPD
onsemi
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
$5.92
Available to order
Reference Price (USD)
1+
$5.46000
10+
$4.91900
450+
$3.86176
900+
$3.48270
1,350+
$2.96400
Exquisite packaging
Discount
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Upgrade your power management systems with the FGH50T65UPD Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGH50T65UPD provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGH50T65UPD for your critical power needs.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Power - Max: 340 W
- Switching Energy: 2.7mJ (on), 740µJ (off)
- Input Type: Standard
- Gate Charge: 230 nC
- Td (on/off) @ 25°C: 32ns/160ns
- Test Condition: 400V, 50A, 6Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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