RGW60TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$5.92
Available to order
Reference Price (USD)
1+
$4.77000
10+
$4.28400
25+
$4.05000
100+
$3.51000
450+
$3.33000
900+
$2.98800
1,350+
$2.52000
Exquisite packaging
Discount
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Discover the RGW60TS65DGC11 Single IGBT transistor by Rohm Semiconductor, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the RGW60TS65DGC11 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the RGW60TS65DGC11 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 178 W
- Switching Energy: 480µJ (on), 490µJ (off)
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 37ns/114ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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